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October 1, 1996Journal of Applied Physics

Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers

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Authors

James S. SpeckJames S. SpeckLinköping UniversityMBM. A. BrewerGBGlenn E. BeltzUniversity of California, Santa Barbara

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Speck et al. (1996) studied this question.

synapsesocial.com/papers/6a9b520595ff697f5e882932https://doi.org/10.1063/1.363334
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Theory of Dislocations (2nd ed.)1983 · 1,984 citations
  2. 2Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy1988 · 80 citations
  3. 3Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices1987 · 78 citations
  4. 4A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path1990 · 215 citations