Photoluminescence for InAs1-y Sb y multilayers grown on InAs substrates by liquid phase epitaxy has been investigated. A 5 K luminescence peak wavelength longer than 5 µm with a full-width at halfmaximum of 10 meV has been obtained. The compositional and temperature dependence of the PL spectra were studied. A band gap energy shift of 50 meV between 5 and 300 K was observed. The results indicate the high quality of the materials. Light emitting diodes with wavelength of 4.2 µm at 77 K have been obtained. The potential applications for a light source operating in 3–5 µm were demonstrated.
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Gong et al. (1997) studied this question.
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