Measuring the continuity of diffusion barriers on porous films using γ-ray energy spectra of escaping positronium

Diffusion barriers for capping porous low dielectric constant films are important for preventing metal migration into a semiconductor circuit. Using the fact that positrons implanted into a porous dielectric form ortho-positronium (o-Ps) copiously, Gidley et al. [D. W. Gidley, W. F. Frieze, T. L. Dull, J. Sun, A. F. Yee, C. V. Nguyen, and D. Y. Yoon, Appl. Phys. Lett. 76, 1282 (2000)], have been able to measure open area fractions as low as 10−5 in porous dielectric film barrier layers from the increase in the ortho-positronium lifetime and intensity associated with positronium escape into vacuum. We demonstrate that it is possible to obtain comparable sensitivities by measuring the gamma-ray energy spectrum of the escaping positronium.