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We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO2 film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.
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Park et al. (2002) studied this question.
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