Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films

The extreme thermal and electronic properties of diamond, SiC, and GaN provide combinations of attributes which lead to the highest figures of merit for any semiconductor materials for high-power, high-temperature, high-frequency, and optoelectronic applications. The methods of deposition and the results of chemical, structural, microstructural and electrical characterization, and device development are reviewed for thin films of these three materials. Problems and areas of future research are also noted.