Poly-Si thin-film transistors (TFTs) fabricated with a maximum processing temperature of 450 degrees C by means of laser-induced crystallization of a-Si are discussed. These devices show high mobilities (50 cm/sup 2//V-s), low threshold voltages (2 V), low off current (10/sup -12/ A), and high reliability. A 3.5-in.-diagonal full-color liquid-crystal display addressed by these poly-Si TFTs is presented.>
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Yuki et al. (1989) studied this question.
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