Hydrogen-implantation-induced activation in phosphorus-implanted silicon

A partial activation of phosphorus -implanted (100) silicon substrates was found to be induced by a subsequent hydrogen ion implantation at . The energy, dose and dose rate dependences of activation were studied using spreading resistance, secondary-ion mass spectroscopy and transmission electron microscopy. In the investigated range of 10 to 60 keV we found 30 keV to be the most suitable implantation energy for activation of -implanted samples at 80 keV without changing the phosphorus depth profile. The activation had a depth profile which was similar to the hydrogen depth profile immediately after implantation. The activation proceeded with increasing dose and decreasing dose rate. A reduction in the density of residual defects was observed with decreasing dose rate. Further electrical activation was achieved by annealing at with a sharper carrier concentration profile for -implanted samples than for just -implanted samples. The activation and annealing mechanism is discussed in view of the contribution of the elastic collision process between ions and substrate atoms.