A small wideband NMOS operational amplifier for high-speed LSIs was fabricated using VLSI technology with a minimum channel width of 3 μm and minimum gate length of 4.5 μm. Results such as 0.062 mm2 silicon area, 66 dB DC open-loop gain, 9.6 MHz gain-bandwidth product, +13.8/−19.3 V/μs slew rates and about 200 ns settling time were successfully obtained. The technique to improve transient response is also discussed.
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Ishihara et al. (1982) studied this question.