Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAlxGa1-x(SySe1-y)2

CuAl x Ga1- x (S y Se1- y )2 quaternary and pentanary alloy layers, lattice-matched with GaP, have been successfully grown by metalorganic vapor phase epitaxy at substrate temperatures of 450–500°C, which could not be achieved previously at 600°C. The quality of layers in terms of crystallinity and luminescence properties has been improved by lowering the growth temperature. The growth over a wide range of Al composition has been demonstrated; photoluminescence over the yellow to violet spectral region can be obtained without changing the lattice parameter.