This paper describes a method for extracting the thermal impedance of bipolar transistors. The measurement is a two-step process: first the fractional temperature coefficients are calibrated at dc and then a transient step response is measured to extract the thermal spreading impedance. Measurement configurations and an example measurement cycle are shown. The measurement results can be fitted to multiple-pole models for use in compact circuit modeling in SPICE.
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Zweidinger et al. (1996) studied this question.
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