Transport coefficients for electron scattering in CF 4 /Ar/O 2 mixtures with a significant presence of F x or CF x radicals

We present transport coefficients for electrons in mixtures of CF 4 with Ar and O 2 which are used in plasma etching, for ratios of the electric field to the gas number density E/N from 1 Td to 1000 Td (1Td=10 −21 Vm 2 ). We then add a certain percentage of radicals produced by dissociation of CF 4 . Our analysis of non-conservative collisions revealed a range of E/N where electron attachment introduced by radicals significantly changes the electron kinetics obtained for mixtures without dissociation of the CF 4 gas. Results are obtained by using a simple, two-term solution for Boltzmann's equation and by Monte Carlo simulations.