In this paper we present the transport coefficients in Ar/CF4 mixtures with realistic abundances of CFx radicals, F atoms, and F2 molecules that are standard products of plasma chemistry in plasma etching systems and are present in large abundances of the order of few percent in realistic plasma etching devices. It was found that, although radicals make a minimum impact on distribution function and mean energy, the effect on drift velocity is significant and the effect on rates of attachment is large and may change the mode of operation of plasmas.
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Nikitović et al. (2009) studied this question.
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