Intrinsic recombination in dependence on doping concentration and excitation level application to lead chalcogenides

On the base of anisotropic and parabolic band structure recombination rates are calculated for the mixed crystals Pb0.78Sn0.22Te and PbS0.1Se0.9 in dependence on non‐equilibrium carrier concentration δn up to 1020 cm−3 in a wide range of temperatures and doping levels. Degeneracy causes different changes of lifetimes or recombination rates for material with different activation energies of the recombination process. Both, weakening or strengthening of the known n2p‐law of the Auger transition rate can occur at beginning degeneracy. At δn > 1019 cm−3 always sublinear behaviour should be observed. For radiative recombination a weakening of the np‐law is obtained generally; in the limit δn > 1019 cm−3 the rate behaves like (δn)4/3.