In‐Plane Organic Ferroelectric Memtransistor Arrays for Temporal Optoelectronic Processing

Encoding temporal optical information in solid‐state hardware requires devices that can locally integrate light sensing, nonvolatile memory, and tunable relaxation dynamics. However, existing optoelectronic memristive architectures still face two key limitations: sneak‐path interference in dense arrays and limited control over the photoresponse dynamics of persistent‐photoconductive materials. Here, we report an in‐plane organic ferroelectric optoelectronic memtransistor array based on a diisopropylammonium bromide (DIPAB)/In 2 O 3 heterostructure. The in‐plane polarization of DIPAB nonvolatilely modulates carrier transport and interfacial barriers, while the out‐of‐plane bottom gate independently regulates the ultrathin In 2 O 3 channel. This orthogonal field configuration decouples ferroelectric memory from gate control, enabling intrinsic selection without disturbing stored states. The monolithic transistor–memristor architecture suppresses sneak‐path currents in a 32 × 32 addressable array with a 91.3% device yield. Coupling ferroelectric polarization with persistent photoconductivity further produces programmable self‐driven photoresponses and gate‐tunable relaxation dynamics. Dynamic handwritten‐digit demonstrations show photoresponsivity‐weighted temporal encoding for recognition and early prediction, establishing a scalable memtransistor platform for temporal optoelectronic information processing.