Comparative assessment of temperature-induced variations in DC, RF and linearity parameters for GaAs-FinFET and Si-FinFET structures

In this article, a comparison study of Si FinFET and GaAs FinFET is performed, with special attention paid to the changes that occur in their parameters depending on the temperature variation. Various parameters, including switching efficiency, threshold voltage, transconductance, capacitance and frequency responses, are analysed thoroughly. The study shows that the GaAs FinFET device demonstrates higher switching efficiency, lower leakage current, and better frequency response than the Si FinFET. Furthermore, the paper explores how temperature affects some other important device performances like drain current, threshold voltage, DIBL, transconductance, gate capacitance, cut-off frequency and the product of transconductance and frequency. Moreover, an analysis of the effects of varying temperatures between 275K and 350K on some other performances related to linearity is carried out. These analyses include third‑order intercept phenomena, harmonics, voltage intercepts, intermodulation distortion, and compression characteristics. All the simulations have been performed using the Silvaco ATLAS simulator. It can be noted that the improved performance offered by GaAs-FinFET is attributed to the greater mobility of charge carriers in addition to favourable material characteristics. Thus, it can be stated that the results obtained in the study prove that GaAs-FinFET is capable of becoming a viable alternative to existing silicon-based devices.