Validation study reveals that residual-symmetry gating accurately identifies series-resistance errors in lithium-ion cells, indicating improved state-of-charge tracking during resistance drift.
When a lithium-ion cell’s series resistance is underestimated, the pre-update terminal-voltage innovation contains the first-order term ek≈−IkR0,kδb. This term breaks conditional sign symmetry and creates an odd response under current reversal. We test that mechanism before using it as an activation rule. The operational null is a near-zero conditional innovation centre with weak innovation–current coupling; declared falsifiers are comparable coupling under the nominal model, the wrong correlation sign under positive resistance error, failure of charge/discharge polarity reversal, or negative-control activation approaching ohmic-mismatch activation. A persistence-confirmed gate combines normalised-innovation-squared exceedances, innovation–current compatibility, a positive local resistance correction, and five consecutive qualifying windows. Sixty settings were ranked on 10 calibration seeds and frozen before disjoint holdouts. From 1.0× to 2.0× R0, the sign-imbalance index increased from 0.0040 to 0.0786, and |corre,I| increased from 0.0658 to 0.7777. The 30-seed static holdout produced 0/30 nominal activations, 27/30 detections at 1.5×, and 30/30 detections at 2.0–3.0×. A disjoint linear-drift audit yielded 0/30 pre-ramp activations and 30/30 detections at a median 1.71× multiplier, reducing late-drift SOC RMSE from 3.129% to 0.895%. A signed-current audit confirmed the predicted polarity reversal. An estimator-unseen audit gave 30/30 ohmic detections but retained 2/30 current-linked non-ohmic and 1/30 current-bias triggers, so the rule is not a unique fault classifier. NASA and LG records remain diagnostics of fixed versus always-on adaptation; they do not validate the gate or independent absolute SOC. The contribution is a falsifiable residual-symmetry mechanism with an explicit evidence boundary, rather than a post hoc symmetry label or hardware claim.
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Ding et al. (2026) studied this question.
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