The influence of a Bi surfactant layer on the growth of Ge on Si(100) substrates was investigated by using a medium-energy ion-backscattering spectrometer and a transmission electron microscope. A monolayer of Bi predeposited on the Si substrates suppressed islanding in the subsequent molecular-beam-epitaxial growth of Ge. The Bi atoms moved on top of the Ge film during the growth process.
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Kawano et al. (1993) studied this question.
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