The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is investigated in an industrial 0.13-μm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak fT/fmaxvalues of 300/500 GHz are achieved. A minimum current-mode logic ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.
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Fox et al. (2015) studied this question.
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