Structural and Electrical Properties of W 6+ ‐Doped Bi 3 TiNbO 9 High‐Temperature Piezoceramics

High‐temperature piezoceramics based on W 6+ ‐doped Bi 3 TiNbO 9 (BTNO) were prepared by solid‐state reaction sintering. A study of the donor doping effects on the structure, microstructure, and electrical properties was conducted. The Curie point ( T c ) decreased in the range of 860°–910°C with increasing amount of W 6+ doping. W 6+ donor dopant decreased the conductivity in BTNO by as much as two orders of magnitude. The increased resistivity in W 6+ ‐doped BTNO induced the materials to be polarized under a high enough field. The highest piezoelectric constant, d 33 , of 12.0 pC/N was achieved with the composition of Bi 3 Ti 0.99 W 0.01 NbO 9 . Also, this composition had a good thermal depoling resistance property.