Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0±0.5)×107 cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm.