Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6/spl times/10/sup -5/ /spl Omega//spl middot/cm/sup 2/ was obtained after annealing in N/sub 2/ ambient at 700/spl deg/C.
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Yun et al. (2005) studied this question.
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