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June 1, 2002Journal of Applied Physics

Mechanism for Ohmic contact formation of Ti on n -type GaN investigated using synchrotron radiation photoemission spectroscopy

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Authors

JKJong Kyu KimNorthwestern UniversityHJHo Won JangKookmin UniversityJLJong‐Lam LeePohang University of Science and Technology

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Kim et al. (2002) studied this question.

synapsesocial.com/papers/6a9ce3e474ebc55f2882d053https://doi.org/10.1063/1.1476085
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  5. 5Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN1997 · 93 citations