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January 1, 2001Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing

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Authors

NPN. A. PapanicolaouUnited States Naval Research LaboratoryMRMulpuri V. RaoGeorge Mason UniversityJMJ. MitterederLouisiana State University

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Papanicolaou et al. (2001) studied this question.

synapsesocial.com/papers/6a9e0c844bbd51f2272cb2eehttps://doi.org/10.1116/1.1331291
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Also Consider

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  1. 1Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN2000 · 26 citations
  2. 2InGaN-Based Multi-Quantum-Well-Structure Laser Diodes1996 · 2,504 citations
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  5. 5Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal1996 · 108 citations