Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

The electron mobility enhancement of extremely thin body In 0.7 Ga 0.3 As-on-insulator (-OI) metal–oxide–semiconductor field-effect transistors (MOSFETs) on Si substrates by using In 0.3 Ga 0.7 As MOS interface buffer layers was demonstrated. The MOSFETs with the InGaAs thickness of 2/5/3 nm have exhibited the electron mobility of 2810 cm 2 V -1 s -1 with an enhancement factor of 4.2 against that of Si MOSFET. We have examined the body thickness ( T body ) dependence of the electron mobility. It was found that a channel thickness fluctuation scattering mechanism strongly affects the mobility in T body of around 10 nm and thinner. The formation of a uniform and flat InGaAs-OI wafer is required for further improvements.