Localized states in inverted silicon-silicon dioxide interfaces

It is suggested that electrons in the inversion layer at an Si-SiO 2 interface can behave like electrons in a two-dimensional disordered system. The conduction band will then have a tail of localized states and an associated mobility edge. It is shown that the wavefunctions of localized states near the edge (at energy E c ) will have a spatial extent which behaves as mod E-E c mod -3 4/.