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The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time‐resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot‐carrier relaxation time is 0.92 ps at 15 K. The hot‐carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron‐phonon scattering dominates the carrier relaxation process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Ushiyama et al. (2008) studied this question.
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