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As an emerging two-dimensional (2D) semiconductor material, monolayer MoS 2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS 2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS 2 monolayers. Here, we review the epitaxial growth of monolayer MoS 2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.
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Wang et al. (2020) studied this question.
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