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June 21, 1990Electronics Letters

Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

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Authors

IPI. PolentierLBL. BuydensMelexis (Germany)AAAnn AckaertGhent University

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Polentier et al. (1990) studied this question.

synapsesocial.com/papers/6a988c067632f0cd16be6fa7https://doi.org/10.1049/el:19900604
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