Electrical characteristics of metal-insulator-semiconductor (MIS) capacitors of a variety of ferroelectric materials like lead zirconate titanate (PZT), lead titanate (PT) and barium magnesium fluoride (BMF) on p-silicon have been studied. PZT was deposited by r.f. magnetron sputtering from a composite target and PT from co-evaporation. The films were annealed in oxygen atmosphere in the temperature range 550–700°C for various times. PZT and PT films which are directly deposited on silicon showed low effective dielectric constant.10 For normal applied bias voltages (±5 V), the C-V curves did not show significant hysteresis. The effective dielectric constant was improved significantly by the incorporation of a buffer layer. BMF film was deposited in ultra high vacuum on a heated substrate and the film was encapsulated by a zirconium oxide layer. The C-V curves for these MIS capacitors shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization.
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Kalkur et al. (1994) studied this question.
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