High-Performance Polysilicon TFTs Using Stacked Pr₂O₃/Oxynitride Gate Dielectric

In this letter, we have developed, for the first time, a stacked Pr2O3/SiOxNygate dielectric into low-temperature polysilicon (poly-Si) thin-film transistors (TFTs). A high- performance TFT device that has a high effective carrier mobility, a high driving current, a small subthreshold swing, and a high ION/IOFFcurrent ratio can be achieved. This phenomenon is attributed to the smooth Pr2O3/poly-Si interface provided by the N2O plasma treatment. The presence of the SiOxNybuffer layer also enhanced the electrical reliability of the Pr2O3poly-Si TFT. All of these results suggest that a high-k Pr2O3gate dielectric prepared under the buffer layer is a good candidate for high- performance TFTs.