Dielectric and electrical studies on as‐grown CeO2 films

Thin film capacitors of CeO2 were fabricated by thermal evaporation. The dielectric properties of these films were studied in the frequency range 0.05–16 KHz at various temperatures, starting from liquid nitrogen temperature to 390 K. The effect of annealing on capacitance and tan δ were studied for different frequencies. The behaviour was explained on the basis of relief in strain energy. The plot between current density and temperature was drawn, and from the slope of the plot the activation energy was calculated and found to be 0.52 ev. The results were discussed.