We have made magnetoresistance measurements in samples of n-InSb in the temperature range 0.05-1.5 K. The carrier densities of the samples studied were {~} 3.1 ×{} 10¹⁴ and 2.7 ×{} 10¹³/cm³. At low fields ( 50 G) the negative magnetoresistance is interpreted as being due to orbital effects, and a detailed comparison with theory is made. The strength of the observed effects with applied field H is 0.55 of that expected from theory. Interaction effects could explain the discrepancy. The inelastic scattering localization rate is determined to vary as T³.
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Dynes et al. (1983) studied this question.
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