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The buffer layers of in (polycrystalline silicon) structure were prepared by metallorganic chemical vapor deposition (MOCVD) and dc magnetron sputtering. The barrier layers of deposited by MOCVD showed a stable interface, and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800°C. The barrier layers effectively prevented the interdiffusion of Pt, O, and Si at annealing temperatures above 700°C in ambient. On the other hand, the barrier layers of formed by dc sputtering showed severe intermixing and strongly influenced the platinum morphology at high temperature annealing. Contacts in and Pt/dc sputtered structures showed the specific contact resistance of and , respectively. The barrier layers of formed by MOCVD in structure were attractive for integration of high dielectric constant .
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Choi et al. (2000) studied this question.
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