Two typical precursors for Bi4Ti3O12 thin films were analyzed spectroscopic methods and the local structure of those were chemically distinguished. Bi═Ti double alkoxide precursor containing Bi═O═Ti bonds promoted the homogeneous crystallization and was applicable to a series of Ca═Bi═Ti layer-structured ferroelectric thin films by addition of Ca ions. A hybrid precursor composed of Bi-triethylhexanoate and Ti-alkoxide needed the additional glass phase to suppress Bi2O3 segregation and resultantly, thinner Bi4Ti3O12 films with a thickness of 40 nm could be synthesized at 500°C and showed ferroelectricity.
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Kato et al. (2004) studied this question.
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