Comparison of Ar-, O-, and Cl-ion implant-damage gettering of gold from silicon using metal oxide silicon techniques

Ar-, O-, and Cl-ion implant-damage gettering of gold from silicon has been examined using metal oxide silicon (MOS) techniques. Silicon wafers were intentionally contaminated with gold and then the ion implantations were performed on the back surface of the wafer and the damaged layer subsequently annealed at 1050° for 60 min. All dosages were 1016 atoms/cm2. Comparison of generation lifetime and interface trap density between the variously implanted wafers and the gold-diffused wafer demonstrated the improvement achieved with implant-damage gettering. The relative order of merit for the ions was found to be Ar≳O≳Cl.