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Heavy metal gettering in silicon devices has been investigated. The best results have been obtained with predeposition followed by annealing at moderate temperature. A model, previously developed for gold, is applied to the description of heavy metal gettering. Once inserted into a standard device process, our gettering step allows us to obtain leakage currents about 100 pA/cm 2 and 1 pA/cm for diodes and storage time around 10 3 sec for capacitors.
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Baldi et al. (1980) studied this question.
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