Simulation study demonstrates high biomolecule sensitivity in a channel-free tunnel FET, indicating strong potential for early-stage disease diagnosis.
To detect disease at an early stage, it is necessary to detect the biomolecules with very high sensitivity. In this work, we have implemented a SiGe source-npn double-gate TFET as a biosensor, where n indicates the drain regions and p is the source region i.e. there is no channel region. Two cavities are created near the source regions through etching HfO2 layers, where biomolecules are immobilized. The sensitivity is extracted for a wide range of k values, i.e. low as well as high values of k, and at various values of x for neutral biomolecules. Further, the sensitivity is reported for positively and negatively charged biomolecules at various k values. Moreover, the energy band diagram, electric field, subthreshold swing (SS) and ION/IOFF ratio are reported for various k and x considering the neutral biomolecules. The effect of fill factor on sensitivity is also highlighted for four different fill factors like 25%, 50%, 75%, and 100%. The proposed device reports a sensitivity in the order of 107 and the sensitivity decreases as the fill factor is reduced.
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Saida et al. (2026) studied this question.
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