Answers are grounded in this paper and cite their sources.
Fully microscopic models are used to investigate the structural dependence of InGaN∕GaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.
No takes yet. Share an insight, caveat, or question.
Hader et al. (2006) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: