Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation

We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted in an inner stripe laser diode with threshold current density of ∼3.3–3.5 kA/cm 2 and slope efficiency of 1.6 W/A. The cw lifetime and other characteristics of the inner stripe laser diode are discussed. Simulation data have also shown that this structure is beneficial for reducing operating voltage when compared to a conventional ridge waveguide structure.