Multi-channel AlN/GaN Schottky barrier diodes

This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R sh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I–V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.