Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 30, 2020IEEE Electron Device Letters

3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

View Full Paper
Ask AI
Bookmark
Share

Authors

MXMing XiaoXidian UniversityYMYunwei MaXuzhou University of TechnologyKCKai ChengChina University of Petroleum, Beijing

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Xiao et al. (2020) studied this question.

synapsesocial.com/papers/6a99b3f675d50b594933a3d6https://doi.org/10.1109/led.2020.3005934
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V2018 · 54 citations
  2. 2Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE2010 · 4 citations
  3. 3AlGaN-GaN Double-Channel HEMTs2005 · 149 citations
  4. 4AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking2013 · 85 citations
  5. 5High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates2006 · 449 citations