The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized using TCAD numerical simulations. Devices were then successfully fabricated in a 6-inch foundry. From the measured electrical characteristics, the OCTFET is demonstrated to have 1.4x superior high frequency figures-ofmerits (HF-FOM) [Ron× Qgd], and 2.1× superior HF-FOM [Ron× Cgd] compared with the conventional linear-cell MOSFET.