High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallization Process

Effect of crystalline defects in metal-induced lateral crystallization (MILC) thin film transistors (TFTs) was studied and a new MILC method was proposed to improve the electrical properties of poly-Si TFTs. Defects at channel, which were formed by Ni in conventional MILC method, could be successfully removed by means of asymmetric Ni-deposition. Since the crystalline defects were removed at the channel, field-effect electron mobility increased by a large value up to 120 cm2/Vs, while the leakage current was reduced. Electrical properties of the TFTs fabricated by the new MILC method were dependent on which side of the channel was deposited with Ni.