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November 29, 2016Chinese Physics B

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Wei Mao Ju-Sheng Fan Ming Du Jinfeng Zhang Chong Wang Xiaohua Ma Jincheng Zhang Yue Hao

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Abstract

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate* , Mao, Wei, Fan, Ju-Sheng, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

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Cite This Study

Mao et al. (2016) studied this question.

synapsesocial.com/papers/6a99cac41cdebc412a5585c4 https://doi.org/10.1088/1674-1056/25/12/127305

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Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Mechanism of current collapse removal in field-plated nitride HFETsOriginal Research · 2005 · 78 citations
2Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMTOriginal Research · 2009 · 90 citations
3Critical Voltage for Electrical Degradation of GaN High-Electron Mobility TransistorsOriginal Research · 2008 · 307 citations
4Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plateOriginal Research · 2001 · 461 citations
5High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behaviorOriginal Research · 2003 · 414 citations

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