InN films are epitaxially grown on GaAs substrates at 450°C by a rf-excited reactive evaporation method. The epitaxial relationship of (0001)InN//(111)GaAs is confirmed from transmission electron diffraction and X-ray diffraction measurements. The value of a full width at half-maximum of the double-crystal X-ray rocking curve for the (0002) diffraction is 17s. Surface morphologies of the InN films are also investigated by scanning electron microscopy.
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Sato et al. (1989) studied this question.
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