Sticking coefficient of the SiH2 free radical on a hydrogenated silicon-carbon surface

The sticking coefficient of SiH2 on a hydrogenated silicon-carbon surface is measured in a low-pressure pulsed-photolysis experiment. Thermal and vibrationally excited SiH2 are created by infrared multiphoton decomposition of n-butylsilane. The first-order wall loss rates of the radicals are determined from the time dependence of the resonance-enhanced multiphoton ionization signal. The sticking coefficients of SiH2 (∼0.1) and vibrationally hot SiH2 (>0.5) are determined from the measured first-order loss rate constants and the calculated wall collision rate constant.