Laser-induced photothermal reflectance (PTR) measurements of arsenic-implanted silicon are reported. The photothermal signals as a function of temperature are presented for both annealed and as-implanted silicon films. The ability to monitor the dependence of signal on doping and on the temperature suggests a novel nondestructive means for characterization of implanted layers. The latter dependence has been qualitatively explained in terms of the temperature variation of the thermal wave effect.
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Vitkin et al. (1989) studied this question.
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