A compact model for dual-gate (DG) carbon-nanotube field-effect transistors (FETs) (CNTFETs) is presented. This compact model includes the most significant mechanisms present in DG CNTFETs such as the Schottky barrier at the metal-nanotube interface, charge and electrostatic modeling, the band-to-band tunneling effect, and quasi-ballistic transport through the Landauer equation. Also, the structure of our DG CNTFET model and its associated equations are versatile and can be used to model different kinds of 1-D ballistic DG FETs, such as graphene-nanoribbon-based devices. Furthermore, this compact model is compared with measurements from two different technologies. Finally, a simple ring oscillator circuit has been simulated using ten identical devices.
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Fregonese et al. (2010) studied this question.
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