Photodiodes with a long-wavelength cutoff extending out to 2.4 μm have been fabricated from MOCVD-grown Ga0.28-In0 72As/Al0.28In0.72As heterostructures, using a compositionally graded buffer layer to accommodate the lattice mismatch between the active layer and the InP substrate. These devices exhibit peak efficiency as high as 95% at 1.8–2.2μm with dark currents as low as 35 nA at −0.5 V reverse bias.
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Moseley et al. (1986) studied this question.