High doping of phosphorus in Si using gas source molecular beam epitaxy

Phosphorus doping using PH3 in gas source Si molecular beam epitaxy was studied. High phosphorus doping up to 2×1020 cm−3 was successfully achieved. The phosphorus concentration in the epitaxial layer was proportional to the PH3 flow rate. Moreover, selective growth of the phosphorus-doped layer was possible. The p-n diode, which consisted of a selectively grown phosphorus-doped layer, a p−-Si (100) substrate, and a SiO2 sidewall, showed a normal I-V characteristic.